Activation and dopant sites of ultra-shallow implanted boron and arsenic in silicon
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference8 articles.
1. Activation and deactivation of implanted B in Si
2. Characteristics of low-energy BF/sub 2/- or As-implanted layers and their effect on the electrical performance of 0.15-μm MOSFET's
3. Clustering of ultra-low-energy implanted boron in silicon during postimplantation annealing
4. Understanding and Controlling Transient Enhanced Dopant Diffusion in Silicon
5. Annealing of Heavily Arsenic-Doped Silicon: Electrical Deactivation and a New Defect Complex
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Analyses of three-dimensional atomic arrangements of impurities doped in Si relating to electrical activity by spectro-photoelectron holography;Japanese Journal of Applied Physics;2020-01-01
2. Individual Atomic Imaging of Multiple Dopant Sites in As-Doped Si Using Spectro-Photoelectron Holography;Nano Letters;2017-12-04
3. Boron-Based Nanoparticles for Chemical-Mechanical Polishing of Copper Films;ECS Journal of Solid State Science and Technology;2012-11-20
4. Wedge etching by anodic oxidation and determination of shallow boron profile by ion beam analysis;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2008-04
5. Precipitation analysis on P-implanted silicon by reflectivity spectrum;Applied Physics Letters;2008-02-11
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3