Author:
Wahl U.,Vantomme A.,Wu M.F.,Pattyn H.,Langouche G.
Subject
Instrumentation,Nuclear and High Energy Physics
Cited by
7 articles.
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1. Dose-dependent precipitate evolution arising during implantation of Er into Si;Journal of Applied Physics;2005-04-15
2. Channeling of low energy heavy ions: Er in Si〈111〉;Applied Physics Letters;2002-06-10
3. Suppression of rare-earth implantation-induced damage in GaN;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-04
4. Epitaxial Silicon/Silicide Heterostructures: Ion Beam Synthesis;Encyclopedia of Materials: Science and Technology;2001
5. Epitaxial ternary Er0.5Y0.5Si1.7 silicide layers formed by channeled ion beam synthesis;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-01