Thermal processing of GaAsSb/GaAs low-dimensional strained-layer structures
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference5 articles.
1. Zinc‐implantation‐disordered (InGa)As/GaAs strained‐layer superlattice diodes
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5. Thermal processing of strained GaInAs/GaAs high hole mobility transistor structures
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1. Large blueshift of the band gap of GaAsSb∕AlSb quantum wells with ion implantation;Applied Physics Letters;2005-01-03
2. Optical properties of tensile-strained barrier GaAsP/GaAs intermixed quantum well structure;Physics and Simulation of Optoelectronic Devices VII;1999-08-06
3. Intermixing in GaAsSb/GaAs single quantum wells;Journal of Applied Physics;1998-10
4. Modeling of optical gain properties of multiple cations InGaAs-InAlAs quantum-well intermixing;IEEE Journal of Quantum Electronics;1998-03
5. Interdiffusion and thermally induced strain relaxation in GaAs/In0.2Ga0.8As/GaAs single quantum well structures;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-03
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