ESR of interfaces and nanolayers in semiconductor heterostructures

Author:

Stesmans Andre,Afanas'ev Valery V.

Publisher

Elsevier

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Photonic nanostructures for advanced light trapping in silicon solar cells: the impact of etching on the material electronic quality;physica status solidi (RRL) - Rapid Research Letters;2015-11-24

2. Functionality of thermally hydrogen-passivated interfaces of oxidized crystalline arrays of Si nanowires on (100)Si;EPL (Europhysics Letters);2014-06-01

3. NBTI Reliability of SiGe and Ge Channel pMOSFETs With $ \hbox{SiO}_{2}/\hbox{HfO}_{2}$ Dielectric Stack;IEEE Transactions on Device and Materials Reliability;2013-12

4. Negative Bias Temperature Instability in (Si)Ge pMOSFETs;Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications;2013-10-19

5. NBTI in (Si)Ge Channel Devices;Bias Temperature Instability for Devices and Circuits;2013-09-10

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