1. Y. Watanabe, J. Nishizawa and I. Sunagawa, Kagaku, vol 21, p 140, Iwanami (1951)
2. Annealing ofN-Type GaAs under Excess Arsenic Vapor
3. Nonstoichiometry of Te-Doped GaAs
4. S. Yamakoshi; Doctor Thesis, Tohoku Univ. (1975) supervised by Prof. Nishizawa J. Nishizawa, N. Toyama, Y. Oyama and K. Inokuchi, Proc. of the 3rd International School on Semiconductor Optoelectronics, Cetniewo, ed. by Marian A. Herman, PWN-Polish Scientific Publishers (Warszawa, 1980) p.p. 27–77(1980)
5. Investigation of the interstitial site in As+-ion-implanted GaAs by means of a multidirectional and high-depth resolution RBS/channelling technique