COMPARISON OF 11B+ AND 49BF2+ AT LOW IMPLANTATION ENERGY IN GERMANIUM PREAMORPHIZED SILICON-Reference-Cited by-同舟云学术

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COMPARISON OF 11B+ AND 49BF2+ AT LOW IMPLANTATION ENERGY IN GERMANIUM PREAMORPHIZED SILICON

Published:1993 Issue: Volume: Page:539-543
ISSN:
Container-title:Ion Implantation Technology–92
language:
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Author:

MINONDO Michel,JAUSSAUD Claude,ROCHE Dominique,PAPON Anne-Marie,VAN DER MEULEN Peter,MEHTA Sandeep

Publisher

Elsevier

Reference14 articles.

1. Formation of shallow P+-N junctions by dual Ge+/B+ implantation

2. The role of extended defects on transient boron diffusion in ion-implanted silicon

3. On the origins of structural defects in BF 2+-implanted and rapid-thermally-annealed silicon: Conditions for defect-free regrowth

4. Effect of fluorine on the diffusion of through‐oxide implanted boron in silicon

5. Junction Location Measured by Spreading Resistance Probe

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Silicon Device Processing;Materials Science and Technology;2013-02-15

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