GaN growth by a controllable RF-excited nitrogen source
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Evaluation of a new plasma source for molecular beam epitaxial growth of InN and GaN films
2. Growth of zinc blende‐GaN on β‐SiC coated (001) Si by molecular beam epitaxy using a radio frequency plasma discharge, nitrogen free‐radical source
3. Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon
4. A comparative study of GaN epilayers grown on sapphire and SiC substrates by plasma‐assisted molecular‐beam epitaxy
5. Heteroepitaxial wurtzite and zinc‐blende structure GaN grown by reactive‐ion molecular‐beam epitaxy: Growth kinetics, microstructure, and properties
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2. A new type photodiode: p-Si/GaN pn junction in series with GaN/Ag Schottky diode;Journal of Alloys and Compounds;2015-11
3. Coherent growth of superconducting TiN thin films by plasma enhanced molecular beam epitaxy;Journal of Applied Physics;2012-10-15
4. RF plasma sources for III-nitrides growth: influence of operating conditions and device geometry on active species production and InN film properties;physica status solidi (a);2006-01
5. Influence of Nitrogen Species on InN Grown by PAMBE;MRS Proceedings;2005
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