Study on dimer density evolution during GaAs short-pulse supersonic nozzle beam epitaxy on (2 × 4)γ initial surface by millisecond time-resolved reflectance difference
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Surface science at atmospheric pressure: Reconstructions on (001) GaAs in organometallic chemical vapor deposition
2. Optimal GaAs(100) substrate terminations for heteroepitaxy
3. Molecular-beam epitaxy growth mechanisms on GaAs(100) surfaces
4. Theoretical consideration on the metalorganic molecular beam epitaxy growth mechanism of III–V semiconductors by molecular orbital calculation
5. Reflectance-difference spectroscopy of (001) GaAs surfaces in ultrahigh vacuum
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Growth and characterization of silicon thin films employing supersonic jets of SiH4 on polysilicon and Si(100);Journal of Applied Physics;1997-12-15
2. Growth control of GaAs using short-pulse supersonic beam epitaxy;Journal of Crystal Growth;1996-07
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