Atomic layer epitaxial growth mechanism of a gallium layer on the (100) As surface of GaAs crystals in MOVPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference6 articles.
1. Atomic-layer growth of GaAs by modulated-continuous-wave laser metal-organic vapor-phase epitaxy
2. Proc. Intern. Conf. on Electronic Materials;Mashita,1988
3. Epitaxial Growth Mechanism of the (100) As Surface of GaAs -- The Effect of Positive Holes --
4. Elementary process of the thermal decomposition of alkyl gallium
5. New approach to the atomic layer epitaxy of GaAs using a fast gas stream
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1. Theoretical consideration on the metalorganic molecular beam epitaxy growth mechanism of III–V semiconductors by molecular orbital calculation;Journal of Crystal Growth;1994-03
2. Ab initio molecular orbital study of the strengths of the gallium-carbon bonds in methylgallanes Ga(CH3)n, n = 1-3;The Journal of Physical Chemistry;1994-01
3. Surface reaction mechanisms in GaAs atomic layer epitaxy;Journal of Crystal Growth;1993-07
4. An ab initio molecular orbital study of the trimethylgallium-arsine adduct: (CH3)3Ga:AsH3;Structural Chemistry;1993-02
5. An ab initio molecular orbital study of the thermal decomposition mechanisms of ethylarsine and ethylgallane;The Journal of Physical Chemistry;1992-10
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