Layer uniformity in a multiwafer MOVPE reactor for III–V compounds
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference6 articles.
1. Uniform (Al)GaAs crystal growth and microwave HIFETs grown by barrel-reactor MOCVD
2. MOVPE Growth of AlGaAs/GaAs Heterostructures for HEMT LSI
3. A parametric investigation of GaAs epitaxial growth uniformity in a high speed, rotating-disk MOCVD reactor
4. A new versatile, large size MOVPE reactor
5. Extremely uniform, reproducible growth of device quality InGaAsP:InP heterostructures in the T-shaped reactor at atmospheric pressure
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1. Perspectives on the Development of Metalorganic Vapor Phase Epitaxy for III-V Optoelectronic Devices;IEEE Journal of Quantum Electronics;2022-08
2. Introduction to Metalorganic Vapor Phase Epitaxy;Metalorganic Vapor Phase Epitaxy (MOVPE);2019-08-30
3. Early history of MOVPE reactor development;Journal of Crystal Growth;2019-01
4. Compound Semiconductors;2017-10-06
5. References;Compound Semiconductors;2017-10-06
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