High quality AlxGa1−x−yInyP alloys grown by MOVPE on (311) B GaAs substrates-Reference-Cited by-同舟云学术

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High quality AlxGa1−x−yInyP alloys grown by MOVPE on (311) B GaAs substrates

Published:1991-01 Issue:1-4 Volume:107 Page:403-409
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Valster A.,Liedenbaum C.T.H.F.,Finke M.N.,Severens A.L.G.,Boermans M.J.B.,Vandenhoudt D.E.W.,Bulle-Lieuwma C.W.T.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference14 articles.

1. Extended Abstract 18th Conf. on Solid State Devices and Materials;Suzuki,1986

2. Strong ordering in GaInP alloy semiconductors; Formation mechanism for the ordered phase

3. Dependence of photoluminescence peak energy of MOVPE-grown AlGaInP on substrate orientation

4. Simple calculations of confinement states in a quantum well

5. Characterization of thin layers on perfect crystals with a multipurpose high resolution x-ray diffractometer

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1. (In,Ga,Al)P–GaP laser diodes grown on high-index GaAs surfaces emitting in the green, yellow and bright red spectral range;Semiconductor Science and Technology;2017-01-20

2. Impact of growth temperature and substrate orientation on dilute-nitride-antimonide materials grown by MOVPE for multi-junction solar cell application;Journal of Crystal Growth;2014-11

3. CVD Grown Materials for High Temperature Electronic Devices : A Review;Transactions of the Indian Ceramic Society;2011-01

4. Nonresonant tunneling in single asymmetric pairs of vertically stackedInPquantum dots;Physical Review B;2007-08-24

5. Substrate orientation dependence of In composition of AlGaInP epilayers grown by MOCVD;Journal of Crystal Growth;2004-09

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