The growth of iron doped semi-insulating InP by hydride vapor phase epitaxy in a nitrogen ambient
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Channelled-substrate buried-heterostructure InGaAsP/InP laser with semi-insulating OMVPE base structure and LPE regrowth
2. Growth of Fe-doped semi-insulating InP by MOCVD
3. The Preparation of Epitaxial Semi-Insulating Gallium Arsenide by Iron Doping
4. Growth of Iron‐Doped Epitaxial Layers for GaAs Field Effect Transistors
5. Fe‐doped semi‐insulating InP grown by chloride vapor‐phase epitaxy
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1. Growth of Fe-Doped Thick GaN Layers for Preparation of Semi-Insulating GaN Substrates;Japanese Journal of Applied Physics;2005-08-12
2. Growth and characterization of thick GaN layers with high Fe doping;physica status solidi (c);2005-04-11
3. Low temperature planar regrowth of semi-insulating InP by low pressure hydride vapour phase epitaxy for device application;Journal of Crystal Growth;1998-05
4. Fabrication and I-V-T behaviour of GaInP : structures;Journal of Crystal Growth;1997-08
5. Hydride vapor phase epitaxy revisited;IEEE Journal of Selected Topics in Quantum Electronics;1997-06
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