Effects of V/III ratio on Si-doping in InGaAs lattice-matched to InP grown by organometallic vapor phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Carbon incorporation in metalorganic chemical vapor deposition (Al,Ga)As films grown on (100), (311)A, and (311)Boriented GaAs substrates
2. Metalorganic chemical vapor deposition of III‐V semiconductors
3. The growth and characterization of high quality MOVPE GaAs and GaAlAs
4. Growth of high-purity GaAs epilayers by MOCVD and their applications to microwave MESFET's
5. Effects of ratio on electronic and optical properties of GaInAs layers grown by MOCVD
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Determination of Optical Properties of MOVPE-Grown InxGa1-xAs/InP Epitaxial Structures by Spectroscopic Ellipsometry;Brazilian Journal of Physics;2022-08-24
2. Confined lateral epitaxial overgrowth of InGaAs: Mechanisms and electronic properties;Journal of Applied Physics;2021-08-28
3. Effects of V/III ratio on InGaAs and InP grown at low temperature by LP-MOCVD;Journal of Crystal Growth;2004-01
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