Growth of Si-doped AlxGa1–xN on (0001) sapphire substrate by metalorganic vapor phase epitaxy-Reference-Cited by-同舟云学术

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Growth of Si-doped AlxGa1–xN on (0001) sapphire substrate by metalorganic vapor phase epitaxy

Published:1991-12 Issue:1-4 Volume:115 Page:648-651
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Murakami Hiroshi,Asahi Tsunemori,Amano Hiroshi,Hiramatsu Kazumasa,Sawaki Nobuhiko,Akasaki Isamu

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference4 articles.

1. Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

2. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

3. Energy band‐gap bowing parameter in an AlxGa1−xN alloy

4. The influence of TMA and SiH4 on the incorporation rate of Ga in AlxGa1−xN crystals grown from TMG and NH3

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