Growth and characterisation of quantum wells and selectively doped heterostructures of InP/Ga0.47In0.53As grown by solid source MBE-Reference-Cited by-同舟云学术

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Growth and characterisation of quantum wells and selectively doped heterostructures of InP/Ga0.47In0.53As grown by solid source MBE

Published:1987-02 Issue:1-4 Volume:81 Page:288-295
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Claxton P.A.,Roberts J.S.,David J.P.R.,Sotomayor-Torres C.M.,Skolnick M.S.,Tapster P.R.,Nash K.J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference13 articles.

1. Optical properties of GaInAs/AlInAs single quantum wells

2. Growth of Ga0.47In0.53As‐InP quantum wells by low pressure metalorganic chemical vapor deposition

3. Photocurrent response of GaInAs/InP multiple quantum well detectors grown by gas source molecular beam epitaxy

4. GaAs/AlGaAs quantum wells and double-heterostructure lasers grown by chemical beam epitaxy

5. Al0.48In0.52As/Ga0.47In0.53As/Al0.48In0.52As double‐heterostructure lasers grown by molecular‐beam epitaxy with lasing wavelength at 1.65 μm

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1. InGaAsP-based uni-travelling carrier photodiode structure grown by solid source molecular beam epitaxy;Optics Express;2012-08-08

2. Optical and structural properties of InGaAs/InP double quantum wells grown by molecular beam epitaxy with polycrystalline GaAs and GaP decomposition sources;Physica E: Low-dimensional Systems and Nanostructures;2006-05

3. Optical and structural properties of GaInAs/InP single quantum wells grown by solid-source MBE with a GaP decomposition source;Journal of Crystal Growth;1998-08

4. Electronic energy levels and energy relaxation mechanisms in self-organized InAs/GaAs quantum dots;Physical Review B;1996-12-15

5. Outlook;Molecular Beam Epitaxy;1996

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