Electrical characteristics of GaAs grown on (Ca,Sr)F2 by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Epitaxial growth of Si films on CaF2/Si structures with thin Si layers predeposited at room temperature
2. GaAs/(Ca,Sr)F2/(001) GaAs lattice‐matched structures grown by molecular beam epitaxy
3. Epitaxial InP/fluoride/InP(001) double heterostructures grown by molecular beam epitaxy
4. Epitaxial growth of lattice‐matched CaxSr1−xF2on (100) and (110) GaAs substrates
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1. Formation of barium carbide during AES depth profiling of thin BaF2 films;Surface and Interface Analysis;1994-12
2. Fluoride/semiconductor and semiconductor/fluoride/semiconductor heteroepitaxial structure research: A review;Thin Solid Films;1990-06
3. Fundamental issues in heteroepitaxy—A Department of Energy, Council on Materials Science Panel Report;Journal of Materials Research;1990-04
4. Progress in Compound‐Semiconductor‐on‐Silicon‐Heteroepitaxy with Fluoride Buffer Layers;Journal of The Electrochemical Society;1989-03-01
5. Growth and characterization of epitaxial silicon on heteroepitaxial CaF2/Si(111) structures;Journal of Applied Physics;1988-12
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