Flow instability of the melt during Czochralski Si crystal growth: dependence on growth conditions; a numerical simulation study
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Extended Abstracts 37th Spring Meeting;Oya,1990
2. Natural and forced convection of molten silicon during Czochralski single crystal growth
3. Direct observation by X-ray radiography of convection of molten silicon in the Czochralski growth method
4. Global modelling of heat transfer in crystal growth furnaces
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1. Simulation of the thermal fluctuation according to the melt height in a CZ growth system;Journal of Crystal Growth;2010-04
2. 3-D time-dependent numerical model of flow patterns within a large-scale Czochralski system;Journal of Crystal Growth;2008-04
3. Modeling of Czochralski Growth of Large Silicon Crystals;Crystal Growth Technology;2008-01-16
4. Three-dimensional CZ silicon melt flow under induction heating;Journal of Crystal Growth;2005-02
5. Effect of high frequency magnetic field on CZ silicon melt convection;International Journal of Heat and Mass Transfer;2004-10
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