MOVPE grown high performance 0.25 μm AlGaAs/InGaAs/GaAs pseudomorphic MODFETs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Pulse-doped AlGaAs/InGaAs pseudomorphic MODFETs
2. Current-gain cutoff frequency comparison of InGaAs HEMTs
3. Influence of quantum-well width on device performance of Al/sub 0.30/Ga/sub 0.70/As/In/sub 0.25/Ga/sub 0.75/As (on GaAs) MODFETs
4. Organometallic vapor phase epitaxial growth of GaAs‐based pseudomorphic modulation‐doped field‐effect transistor structures
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1. Mobility and charge density tuning in double δ-doped pseudomorphic high-electron-mobility transistors grown by metal organic chemical vapor deposition;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2006
2. Comparison of OMVPE and MBE grown AlGaAs/InGaAs PHEMT structures;Journal of Crystal Growth;1996-10
3. Characterization of III - V semiconductor interfaces byZ-contrast imaging, EELS and CBED;Journal of Physics D: Applied Physics;1996-07-14
4. Comparison of OMVPE Grown GaAs/AlGaAs and GaAs/InGaP HEMT and PHEMT structures;Journal of Electronic Materials;1995-11
5. The effects of substrate misorientation on silicon doping efficiency in MOVPE grown GaAs;Journal of Crystal Growth;1992-11
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