MOVPE of narrow band gap II–VI materials

Author:

Triboulet R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Crystal Growth and Surfaces;CdTe and Related Compounds; Physics, Defects, Hetero- and Nano-structures, Crystal Growth, Surfaces and Applications;2010

2. MOCVD of p-CdxHg1 – xTe/GaAs Heteroepitaxial Structures;Inorganic Materials;2004-01

3. Metalorganic vapor-phase epitaxy of ZnTe and CdZnTe on GaAs;Inorganic Materials;2002

4. Doping in MOVPE of HgCdTe: orientation effects and growth of high performance IR photodiodes;Journal of Crystal Growth;1997-01

5. The growth and characterization of (211) and (133) Oriented (Hg,Cd)Te epilayers (211)B GaAs by organometallic vapor phase epitaxy;Journal of Electronic Materials;1995-09

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