Arsenic desorption from the InAs(001) growth surface during atomic layer epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. Growth of a novel InAs‐GaAs strained layer superlattice on InP
2. (InAs)1(GaAs)1Layered Crystal Grown by MOCVD
3. A New High-Electron Mobility Monolayer Superlattice
4. Long‐wavelength (1.3 μm) luminescence in InGaAs strained quantum‐well structures grown on GaAs
5. GaAs/GaP strained-layer superlattices grown by atomic layer epitaxy
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1. Chapter 4 Optical Characterization of Quantum Dots;Semiconductors and Semimetals;1999
2. Surface Kinetics and Mechanism of Atomic Layer Epitaxy of GaAs Using Trimethylgallium;Advances in the Understanding of Crystal Growth Mechanisms;1999
3. Growth and optical evaluation of InGaAs/GaAs quantum dots self-formed during alternate supply of precursors;Applied Surface Science;1997-03
4. Self limiting growth on nominally oriented (111)A GaAs substrates in atomic layer epitaxy;Applied Surface Science;1996-11
5. InP-on-InGaAs interface with Ga and In coverage in metalorganic vapor phase epitaxy of superlattices;Journal of Crystal Growth;1995-01
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