GaInP multiwafer growth by LP-MOVPE for HBTs, lasers, LEDs or solar cells
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. High quality AlxGa1−x−yInyP alloys grown by MOVPE on (311) B GaAs substrates
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1. Elastic properties of GaxIn1−xP semiconductor;Physica B: Condensed Matter;2011-12
2. Chapter 1 Visible Light-Emitting Diodes;Semiconductors and Semimetals;1999
3. Chapter 4 OMVPE Growth of AlGalnP for High-Efficiency Visible Light-Emitting Diodes;Semiconductors and Semimetals;1997
4. Replacement of hydrides by TBAs and TBP for the growth of various III–V materials in production scale MOVPE reactors;Journal of Crystal Growth;1997-01
5. High-efficiency GaInP/GaAs tandem solar cells;Journal of Propulsion and Power;1996-09
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