Improvement in lasing characteristics of II–VI blue-green lasers using quaternary and ternary alloys to produce pseudomorphic heterostructures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Blue‐green injection lasers containing pseudomorphic Zn1−xMgxSySe1−ycladding layers and operating up to 394 K
2. Room temperature continuous operation of blue-green laser diodes
3. Blue‐green laser diodes
4. J. Petruzzello, J. Gaines and P. van der Sluis, J. Appl. Phys., submitted.
5. Quantum well GaAs/AlGaAs diode lasers grown in a PLANET OMVPE reactor
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1. Energy band gap of the alloy Zn1−xMgxSeyTe1−y lattice matched to ZnTe, InAs and InP;Journal of Crystal Growth;2000-06
2. Optimization of pre-epitaxial processes to obtain high-quality ZnSe/GaAs heterointerfaces grown in a low-pressure metalorganic vapour-phase epitaxy system;Journal of Crystal Growth;1998-08
3. Characterization of ZnMgSSe/ZnSe quantum wells grown by MOVPE;Journal of Crystal Growth;1998-02
4. ZnSSe epilayers with extremely low defect density by the growth-temperature optimization;Semiconductor Science and Technology;1997-06-01
5. Metalorganic vapor phase epitaxy of II–VI materials for visible light emitters;Journal of Crystal Growth;1996-09
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