Modulation doped inverted and normal GaAs/AlxGa1−xAs heterostructures: influence of Si-segregation on the two-dimensional electron gas
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. Mobility of the two-dimensional electron gas at selectively dopedn-typeAlxGa1−xAs/GaAs heterojunctions with controlled electron concentrations
2. Electron mobilities exceeding 107cm2/V s in modulation‐doped GaAs
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4. Proc. 13th Intern. Symp. on GaAs and Related Compounds;Nishi,1987
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1. Effects of indium doping on the properties of AlAs/GaAs quantum wells and inverted AlGaAs/GaAs two-dimensional electron gas;Semiconductor Science and Technology;2004-02-02
2. Doping optimizations for InGaAs/InP composite channel HEMTs;Journal of Crystal Growth;1998-12
3. Kink-free characteristics of AlSb/InAs high electron mobility transistors with planar Si doping beneath the channel;IEEE Transactions on Electron Devices;1998
4. Molecular beam epitaxy of GaAs/AlxGa1−xAs/InyGa1−yAs heterostructures for opto-electronic devices: control of growth parameters;Applied Surface Science;1996-07
5. Improved inverted AlInGa/GaInAs two-dimensional electron gas structures for high quality pseudomorphic double heterojunction AlInAs/GaInAs high electron mobility transistor devices;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1994-09
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