Vapour growth mechanism of silicon layers by dichlorosilane decomposition-Reference-Cited by-同舟云学术

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Vapour growth mechanism of silicon layers by dichlorosilane decomposition

Published:1983-01 Issue:1 Volume:61 Page:102-110
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Morosanu C.E.,Iosif D.,Segal E.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

1. Chemical Vapour Deposition of Thin Films;Morosanu,1981

2. Deposition of Polycrystalline Silicon by Pyrolysis of Silane in Argon

3. Semiconductor Silicon;Bloem,1977

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Calculations of selective Si epitaxial growth;Applied Surface Science;2020-06

2. Numerical modeling study on the epitaxial growth of silicon from dichlorosilane;Journal of Crystal Growth;2018-02

3. Vapor Phase Epitaxy;Advances in Materials Research;2009

4. Kinetics of chemical vapor deposition of WSix films from WF6 and SiH2Cl2: Effect of added H2, SiH4, and Si2H6;Microelectronic Engineering;2006-10

5. Prediction of Elementary Reaction Mechanism for the CVD Process in Si₂Cl₆-H₂ System using Semi-Empirical Molecular Orbital Method;Journal of the Japan Institute of Metals;1999

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