The carrier mobilities in Ga0.47In0.53as grown by organo-mettalic CVD and liquid-phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Ga<inf>0.47</inf>In<inf>0.53</inf>As: A ternary semiconductor for photodetector applications
2. Integrated In0.53Ga0.47As p-i-n f.e.t. photoreceiver
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