Characterization of electrical and optical loss of MOCVD regrowth in strained layer InGaAs-GaAs quantum well heterostructure lasers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
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Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Progress in InGaAs-GaAs selective-area MOCVD toward photonic integrated circuits;IEEE Journal of Selected Topics in Quantum Electronics;1997-06
2. Real-Time Physiconeural Solutions for MOCVD;Journal of Heat Transfer;1996-11-01
3. Single‐frequency antiguided laser array with buried distributed feedback grating;Journal of Applied Physics;1994-06
4. Wavelength tuning in strained layer InGaAs-GaAs-AlGaAs quantum well lasers by selective-area MOCVD;Journal of Electronic Materials;1994-02
5. Monolithic integration of a strained-layer InGaAs-GaAs-AlGaAs quantum-well laser with a passive waveguide by selective-area MOCVD;IEEE Photonics Technology Letters;1993-04
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