Electron beam induced current assessment of doped and diffused junctions in epitaxial CdxHg1−xTe
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference26 articles.
1. Type conversion in CdxHg1-xTe by ion beam treatment
2. Type conversion of CdxHg1-xTe grown by liquid phase epitaxy
3. A diffusion model for indium in Hg1−xCdxTe
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1. Development of Electron Beam Induced Current Characterization of HgCdTe Based Photodiodes;Journal of Electronic Materials;2019-03-25
2. Modification of Hg1−x CdxTe properties by low-energy ions;Semiconductors;2003-10
3. Depth and lateral extension of ion milled pn junctions in Cd[sub x]Hg[sub 1−x]Te from electron beam induced current measurements;Journal of Applied Physics;2002
4. Electron beam induced current study of ion beam milling type conversion in molecular beam epitaxy vacancy-doped CdxHg1−xTe;Journal of Electronic Materials;2000-06
5. Cathodoluminescence analysis of cleaved facets of a ZnSe p–n junction;Journal of Applied Physics;2000-04-15
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