Low-vacuum metalorganic vapor phase epitaxy of InGaP and its immiscible growth
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference27 articles.
1. Optically pumped laser action at 77 K of InGaP/InGaAlP double heterostructures grown by MBE
2. Room-temperature CW operation of AlGaInP double-heterostructure visible lasers
3. Donor energy level for Se in Ga1−xAlxAs
4. MOCVD growth of AlGaInP at atmospheric pressure using triethylmetals and phosphine
5. Gas source MBE of InP and GaxIn1−xPyAs1−y : Materials properties and heterostructure lasers
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Growth of InGaP by metalorganic molecular beam epitaxy using novel Ga sources;Journal of Applied Physics;1993-03
2. -nonconserving transition in heavily doped LPE grown n-type In0.5Ga0.5P;Solid State Communications;1992-04
3. Chemical beam epitaxy growth of GaAs/Ga0.5In0.5P heterostructures: growth kinetics, electrical and optical properties;Journal of Crystal Growth;1991-05
4. Kinetic study of metalorganic molecular beam epitaxy of GaP, InP, and GaxIn1−xP;Journal of Applied Physics;1991-03
5. Organometallic precursors in the growth of epitaxial thin films of III-V semiconductors by metal-organic chemical vapor deposition (MOCVD);Chemistry of Materials;1991-03
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