Cross-sectional TEM study of microstructures in MOVPE GaN films grown on α-Al2O3 with a buffer layer of AlN-Reference-Cited by-同舟云学术

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Cross-sectional TEM study of microstructures in MOVPE GaN films grown on α-Al2O3 with a buffer layer of AlN

Published:1991-12 Issue:1-4 Volume:115 Page:381-387
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kuwano Noriyuki,Shiraishi Tadayoshi,Koga Akihiro,Oki Kensuke,Hiramatsu Kazumasa,Amano Hiroshi,Itoh Kenji,Akasaki Isamu

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference12 articles.

1. Properties of Zn‐doped GaN. I. Photoluminescence

2. Growth of GaN Thin‐Films from Triethylgallium Monamine

3. Energy band‐gap bowing parameter in an AlxGa1−xN alloy

4. Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

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3. Development of GaN-based blue LEDs and metalorganic vapor phase epitaxy of GaN and related materials;Progress in Crystal Growth and Characterization of Materials;2016-06

4. Growth of GaN on Sapphire via Low-Temperature Deposited Buffer Layer and Realization of p-Type GaN by Mg Doping Followed by Low-Energy Electron Beam Irradiation;International Journal of Modern Physics B;2015-12-17

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