Characterization of directionally solidified Hg1 − xZnxSe semiconducting alloys-Reference-Cited by-同舟云学术

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Characterization of directionally solidified Hg1 − xZnxSe semiconducting alloys

Published:1991-03 Issue:3 Volume:110 Page:415-422
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Cobb S.D.,Andrews R.N.,Szofran F.R.,Lehoczky S.L.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference24 articles.

1. Electron transport in theHg1−xCdxSealloy system

2. Effects influencing the structural integrity of semiconductors and their alloys

3. Advanced Methods for Preparation and Characterization of Infrared Detector Materials, Part I;Lehoczky;NASA CR-161598,1980

4. Advanced Methods for Preparation and Characterization of Infrared Detector Materials, Part II;Lehoczky;NASA CR-161949,1981

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1. Systems Based on ZnSe;Ternary Alloys Based on II-VI Semiconductor Compounds;2013-07-11

2. Electrochemical Deposition and Characterization of Cd-Fe-Se Thin Films;Advanced Materials Research;2009-04

3. Synthesis and characterization of Zn0.5Hg0.5Se thin films;Materials Chemistry and Physics;2008-12

4. Characterization of electrodeposited Zn1−xHgxSe thin films;Semiconductor Science and Technology;2005-06-06

5. Experimental study of the solid–liquid interface dynamics and chemical segregation in concentrated semiconductor alloy Bridgman growth;Journal of Crystal Growth;2005-03

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