Lattice strain near interface of MBE-grown ZnTe on GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. Realization of bothp‐ andn‐type conduction for ZnSe‐ZnTe strained‐layer superlattices
2. Raman scattering determination of strain in CdTe/ZnTe superlattices
3. Electron and x‐ray diffraction study of ZnTe‐ZnS strained‐layer superlattices grown by molecular beam epitaxy
4. Effects of Zn to Te ratio on the molecular‐beam epitaxial growth of ZnTe on GaAs
5. Intrinsic and extrinsic photoluminescence spectra of ZnTe films on GaAs deposited by molecular‐beam and organo‐metallic vapor‐phase epitaxy
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1. High quality ZnTe heteroepitaxy layers using low-temperature buffer layers;Journal of Crystal Growth;2003-04
2. Growth and evaluation of high-quality ZnTe/GaAs by hot wall epitaxy;PHYS STATUS SOLIDI A;2002
3. Growth and Evaluation of High-Quality ZnTe/GaAs by Hot Wall Epitaxy;physica status solidi (a);2002-05
4. Investigation of free and bound excitons in strained ZnTe films grown by MBE on GaAs(100) substrates;Physics of the Solid State;2000-02
5. The structural and optical properties of high quality ZnTe grown on GaAs using ZnSe/ZnTe strained superlattices buffer layer;Journal of Applied Physics;1998-09
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