Uniform (Al)GaAs crystal growth and microwave HIFETs grown by barrel-reactor MOCVD
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference7 articles.
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Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Simulation of Epitaxial Silicon Chemical Vapor Deposition in Barrel Reactors;Le Journal de Physique IV;1995-06
2. MOCVD of Compound Semiconductor Layers;Handbook of Compound Semiconductors;1995
3. Large Area and Highly Uniform MOVPE Growth for AlGaAs / GaAs HEMT LSIs;Journal of The Electrochemical Society;1993-08-01
4. Atomic layer epitaxy of III–V compounds using metalorganic and hydride sources;Materials Science Reports;1992-04
5. Inverted-vertical OMVPE reactor: design and characterization;Journal of Crystal Growth;1992-02
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