Influence of temperature and tetramethylsilane partial pressure on the β-SiC deposition by cold wall chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. A morphological and structural study of SiC layers obtained by LPCVD using tetramethylsilane
2. Thermodynamic and Experimental Aspects of Gallium Arsenide Vapor Growth
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5. Chemical vapour deposition of silicon carbide: An X-ray diffraction study
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1. Exploring electrical conductivity, antibacterial efficacy, and photocatalytic activity in nanosilver-decorated β-SiC/graphene nanocomposites;Materials Chemistry and Physics;2024-05
2. Mechanism of the thermal decomposition of tetramethylsilane: a flash pyrolysis vacuum ultraviolet photoionization time-of-flight mass spectrometry and density functional theory study;Physical Chemistry Chemical Physics;2018
3. Fundamental Evaluation of Gas-Phase Elementary Reaction Models for Silicon Carbide Chemical Vapor Deposition;ECS Journal of Solid State Science and Technology;2017
4. Synthesis of α-SiC from tetramethylsilane by chemical vapor deposition at high temperature;Applied Physics Express;2014-01-09
5. Epitaxial Growth of Silicon Carbide by Chemical Vapor Deposition;Springer Handbook of Crystal Growth;2010
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