Characterization of the interface abruptness of In0.53Ga0.47As/InP multi quantum wells by Raman spectroscopy, X-ray diffractometry and photoluminescence-Reference-Cited by-同舟云学术

Characterization of the interface abruptness of In0.53Ga0.47As/InP multi quantum wells by Raman spectroscopy, X-ray diffractometry and photoluminescence

Published:1994-12 Issue:1-4 Volume:145 Page:813-818
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Geurts J.,Finders J.,Woitok J.,Gnoth D.,Kohl A.,Heime K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference9 articles.

1. Investigation of MOVPE-grown In0.53Ga0.47 As/InP multi-quantum wells by Raman spectroscopy and X-ray diffractometry

2. Characterization of interface structure in GaInAs/InP superlattices by means of X-ray diffraction

3. Evidence for intrinsic interfacial strain in lattice-matchedInxGa1−xAs/InP heterostructures

4. Single longitudinal‐mode optical phonon scattering in Ga0.47In0.53As

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