Modelling of growth in a 5 X 3 inch multiwafer metalorganic vapour phase epitaxy reactor
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. A new versatile, large size MOVPE reactor
2. Layer uniformity in a multiwafer MOVPE reactor for III–V compounds
3. The radial flow planetary reactor: low pressure versus atmospheric pressure MOVPE
4. Quantum well GaAs/AlGaAs diode lasers grown in a PLANET OMVPE reactor
5. GaInP multiwafer growth by LP-MOVPE for HBTs, lasers, LEDs or solar cells
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1. Interpretation of Absolute Laser Reflectance During Optical Monitoring of Polycrystalline GaAs Deposition on Quartz Using Metalorganic Chemical Vapor Deposition;Journal of Electronic Materials;2011-02-25
2. The kinetics of parasitic growth in GaAs MOVPE;Journal of Crystal Growth;2007-03
3. Transport phenomena in radial flow MOCVD reactor with three concentric vertical inlets;Journal of Crystal Growth;2006-08
4. In situ monitoring of parasitic growth on the quartz top plate during the MOVPE growth of GaAs/AlGaAs structures;Journal of Crystal Growth;2003-09
5. Analysis compositional homogeneity for MOVPE grown ternary alloys in the horizontal reactor with a rotating susceptor;Journal of Crystal Growth;1998-10
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