Role of the substrate deoxidation process in the growth of strained InAs/InP heterostructures-Reference-Cited by-同舟云学术

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Role of the substrate deoxidation process in the growth of strained InAs/InP heterostructures

Published:1995-05 Issue: Volume:150 Page:123-127
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Bruni M.R.,Gambacorti N.,Kačiulis S.,Mattogno G.,Simeone M.G.,Quagliano L.G.,Tomassini N.,Jusserand B.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference9 articles.

1. Epitaxial regrowth of an InAs surface on InP: An example of artificial surfaces

2. Structural and chemical properties of InAs layers grown on InP(100) surfaces by arsenic stabilization

3. Depth profiling of InxGa1-xAs/GaAs superlattice

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Universal Deoxidation of Semiconductor Substrates Assisted by Machine Learning and Real-Time Feedback Control;ACS Applied Materials & Interfaces;2024-03-30

2. Growth of self-organized InAs quantum dots on InP by solid-source molecular beam epitaxy;Journal of Crystal Growth;2000-06

3. Effects of As/P exchange reaction on the formation of InAs/InP quantum dots;Applied Physics Letters;1999-04-05

4. InAs on InP: Intermediate alloy formation and interface vibrations;Physical Review B;1997-08-15

5. Interface abruptness in strained III–V heterostructures;Applied Surface Science;1996-09

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