Growth and characterization by X-ray diffraction of GaP/InP short-period superlattices
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Misfit dislocation generation in epitaxial layers
2. Critical thickness determination of InAs, InP and GaP on GaAs by X-ray interference effect and transmission electron microscopy
3. Physical Concepts of Materials for Novel Optoelectronic Device Applications I;Recio;SPIE Proc.,1991
4. Atomic layer molecular beam epitaxy (Almbe) of III?V compounds: Growth modes and applications
5. Molecular Beam Epitaxy of GaP and GaAs1-xPx
Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. X-ray double crystal diffraction and Raman spectra measurements of AlP/GaP short-period superlattices;Semiconductor Science and Technology;1999-01-01
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