Virtual-surfactant mediated epitaxy of InAs on GaAs(001) studied by scanning tunneling microscopy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Nucleation and strain relaxation at the InAs/GaAs(100) heterojunction
2. Self‐organized growth of regular nanometer‐scale InAs dots on GaAs
3. Critical layer thickness for self-assembled InAs islands on GaAs
4. Microwave microscopy using a superconducting quantum interference device
5. Formation and morphology of InAs/GaAs heterointerfaces
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1. Growth of Low-Dimensional Semiconductors Structures;Comprehensive Semiconductor Science and Technology;2011
2. Influence of boron surface enrichment on the growth mode of BGaAs epilayers grown on GaAs by metalorganic vapour phase epitaxy;Thin Solid Films;2008-10
3. Planar InAs growth on GaAs(001) and subsequent quantum dot formation by a surface induced morphological instability;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004
4. Structural analysis of the indium-stabilizedGaAs(001)−c(8×2)surface;Physical Review B;2002-12-04
5. Growth mode ofInxGa1−xAs(0<~x<~0.5)on GaAs(001) under As-deficient conditions;Physical Review B;2002-04-02
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