The deep levels in InGaAlP epilayers grown by metalorganic chemical vapor deposition using tertiarybutylphosphine
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. Use of tertiarybutylarsine in the metalorganic chemical vapor deposition growth of GaAs
2. The growth of GaAs, AlGaAs, and selectively doped AlGaAs/GaAs heterostructures by metalorganic vapor phase epitaxy using tertiarybutylarsine
3. High quality long‐wavelength lasers grown by atmospheric organometallic vapor phase epitaxy using tertiarybutylarsine
4. Characterization of InP Grown by OMVPE Using Tertiary-butylphosphine for the Phosphorous Source
5. The use of tertiarybutylphosphine and tertiarybutylarsine for the metalorganic molecular beam epitaxy of the In0.53Ga0.47As/InP and In0.48Ga0.52P/GaAs materials systems
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Selective area growth of InP in shallow trench isolation on large scale Si(001) wafer using defect confinement technique;Journal of Applied Physics;2013-07-21
2. Influence of substrate misorientation on vibrational properties of In1−x−yGaxAlyAs grown on InP;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2004-01
3. 650-nm AlGaInP multiple-quantum-well lasers grown by metalorganic chemical vapor deposition using tertiarybutylphosphine;Applied Physics Letters;2003-07-28
4. High quality AlGaInP epilayers grown by MOCVD using TBP for red lasers;Journal of Crystal Growth;2003-06
5. Nondestructive assessment of In0.48(Ga1−xAlx)0.52P films grown on GaAs (001) by low pressure metalorganic chemical vapor deposition;Journal of Applied Physics;1999-04
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