Formation of the bands of anomalous oxygen precipitation in Czochralski-grown Si crystals
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. A Comparison of Internal Gettering during Bipolar, CMOS, and CCD (High, Medium, Low Temperature) Processes
2. The Effects of Thermal History during Growth on O Precipitation in Czochralski Silicon
3. Effects of Thermal History on Microdefect Formation in Czochralski Silicon Crystals
4. Semiconductor Silicon 1986;Harada,1986
5. The effect of thermal history during crystal growth on oxygen precipitation in Czochralski-grown silicon
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1. Mechanism to form ring-like distributed oxidation-induced stacking fault bands through relaxing thermal stress during stopping the growth in CZ silicon crystals;Journal of Crystal Growth;2022-07
2. Radial oxygen precipitation of a 12” CZ silicon crystal studied in-situ with high energy X-ray diffraction;physica status solidi (a);2014-09-01
3. Mechanism of Formation and Physical Classification of the Grown-In Microdefects in Semiconductor Silicon;Defect and Diffusion Forum;2004-11
4. Computer Simulation of Point-Defect Fields and Microdefect Patterns in Czochralski-Grown Si Crystals;Japanese Journal of Applied Physics;2002-02-15
5. Study on defects in CZ-Si crystals grown under three different cusp magnetic fields by infrared light scattering tomography;Journal of Crystal Growth;1999-08
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