Spontaneous generation of dislocations during growth of silicon single crystals
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference5 articles.
1. Growth of Silicon Crystals Free from Dislocations
2. Production of Dislocations During Growth from the Melt
3. Production of Dislocations in Germanium by Thermal Shock
4. Some defects in crystals grown from the melt - I. Defects caused by thermal stresses
5. Dislocations in Silicon Single Crystals
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A comparative study of thermal stress induced dislocation generation in pulled GaAs, InP, and Si crystals;Journal of Applied Physics;1981-05
2. Germanium and Silicon;Semiconductors;1972
3. Étude par la méthode de lang, de l'évolution des défauts dans la croissance en solution de cristaux ioniques et moléculaires;Journal of Crystal Growth;1971-07
4. Silicon crystals almost free of dislocations;Journal of Crystal Growth;1971-02
5. CRYSTALLIZATION—PART I. ANNUAL REVIEW - "Transport Phenomena of Nucleation and Crystal Growth";Industrial & Engineering Chemistry;1969-10-01
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