LPE growth of 1.5–1.6 μm In1−xGaxAs1−yPy crystals by a modified source-seed method
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. Ultimate low-loss single-mode fibre at 1.55 μm
2. Room‐temperature operation of GaInAsP/InP double‐heterostructure diode lasers emitting at 1.1 μm
3. 1.3 µm CW Operation of GaInAsP/InP DH Diode Lasers at Room Temperature
4. In1-xGaxAsyP1-y/InP DH lasers fabricated on InP
5. InP‐GaxIn1−xAsyP1−ydouble heterostructure for 1.5 μm wavelength
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1. LPE growth and characterization of InP/InGaAsP ridge-waveguide lasers at 1.3 μm-wavelength;Crystal Research and Technology;1990-06
2. The co-existence of multi-component liquid and solid intermediate phases before the hetero-LPE of III–V solid solutions;Progress in Crystal Growth and Characterization;1989-01
3. Application of tie-line concept on the liquid phase epitaxial growth of GaInAsP on InP;Journal of Crystal Growth;1988-10
4. Estimate of the crystallization factor of epitaxial layers of semiconducting solid solutions;Soviet Physics Journal;1988-09
5. Peculiarities of liquid phase epitaxy in GaInPAs/InP lattice-matched heterostructures;Journal of Crystal Growth;1987-02
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