Growth of GaInP thick layers by the modified yo-yo solute feeding method
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. Liquid phase epitaxial growth of GaxIn1−xP
2. MOCVD Growth of InGaP on GaP Substrates and Its Application to Visible LEDs
3. High‐efficiency InGaP light‐emitting diodes on GaP substrates
4. Liquid phase epitaxial (LPE) grown junction In1−xGaxP (x∼0.63) laser of wavelength λ∼5900 Å (2.10 eV, 77°K)
5. Visible InGaP/GaAsP Dual Wavelength Light Emitting Diodes
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1. Liquid-Phase Epitaxy;Handbook of Crystal Growth;2015
2. Liquid Phase Epitaxy: A Survey of Capabilities, Recent Developments and Specialized Applications;Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials;2007-09-04
3. Formation mechanism of InxGa1−xAs bridge layers on patterned GaAs substrates;Journal of Crystal Growth;2000-03
4. Liquid-phase epitaxial growth of InGaP and InGaAsP on GaAs0.69P0.31 substrates with application to visible light-emitting diodes;Solid-State Electronics;1999-04
5. Control of GaInSb alloy composition grown from ternary solution;Journal of Crystal Growth;1998-03
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