Recent progress in octagon growth using edge-defined film-fed growth-Reference-Cited by-同舟云学术

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Recent progress in octagon growth using edge-defined film-fed growth

Published:1990-07 Issue:1 Volume:104 Page:88-92
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Harvey David S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference7 articles.

1. 13th IEEE Photovoltaic Specialists Conf. Record;Mackintosh,1978

2. 15th IEEE Photovoltaic Specialists Conf. Record;Taylor,1981

3. Long nonagons — An approach to high productivity silicon sheet using the EFG method

4. 19th IEEE Photovoltaic Specialists Conf. Record;Wald,1987

5. Continuous Silicon Solar Cells;Chalmers;Final Report,1975

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Theoretical Simulation of the Thermal Profile in Capillary Action Shaping Technique and Its Verification Through the Growth of Silicon Sheets;Material Science Research India;2015-06-25

2. An advanced multi-block method for the multiresolution modelling of EFG silicon tube growth;Modelling and Simulation in Materials Science and Engineering;2002-12-02

3. Shaped crystal growth of 50cm diameter silicon thin-walled cylinders by edge-defined film-fed growth (EFG);Journal of Crystal Growth;2001-05

4. A numerical model for inductively heated cylindrical silicon tube growth system;Journal of Crystal Growth;2000-04

5. Growth of silicon sheets for photovoltaic applications;Journal of Materials Research;1998-10

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