Growth of AlxGa1−xAs by MOVPE using a new alkylaluminium precursor-Reference-Cited by-同舟云学术

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Growth of AlxGa1−xAs by MOVPE using a new alkylaluminium precursor

Published:1989-08 Issue:4 Volume:96 Page:769-773
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Jones A.C.,Jacobs P.R.,Rushworth S.,Roberts J.S.,Button C.,Wright P.J.,Oliver P.E.,Cockayne B.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference12 articles.

1. Proc. 3rd Intern. Conf. on MOVPE,1986

2. Properties of high‐purity AlxGa1−xAs grown by the metalorganic vapor‐phase‐epitaxy technique using methyl precursors

3. The influence of growth chemistry on the MOVPE growth of GaAs and AlxGa1−xAs layers and heterostructures

4. Reduced Carbon Contamination in OMVPE Grown GaAs and AlGaAs

5. Metallorganische Verbindungen. XXXVIII Pyrolyse von Aluminiumtrialkylen

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2. Al 2 O 3 thin films by plasma-enhanced chemical vapour deposition using trimethyl-amine alane (TMAA) as the Al precursor;Applied Physics A: Materials Science & Processing;1997-10-01

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5. Aluminium and gallium alkyls and their derivatives: spectroscopic and laser pyrolysis studies of metal deposition precursors;Coordination Chemistry Reviews;1992-01

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