Adsorption and desorption of atomic hydrogen on Si(001) and its effects on Si MBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. Are bare surfaces detrimental in epitaxial growth?
2. Spectral blue shift of photoluminescence in strained‐layer Si1−xGex/Si quantum well structures grown by gas‐source Si molecular beam epitaxy
3. Surface Hydrogen Effects on Ge Surface Segregation during Silicon Gas Source Molecular Beam Epitaxy
4. Surfactants in epitaxial growth
5. Ge segregation at Si/Si1−xGex interfaces grown by molecular beam epitaxy
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1. Ge quantum dot arrays grown by ultrahigh vacuum molecular-beam epitaxy on the Si(001) surface: nucleation, morphology, and CMOS compatibility;Nanoscale Research Letters;2011-09-05
2. Hydrogen Desorption from the Surface under the Conditions of Epitaxial Growth of Silicon Layers from Monosilane in Vacuum;Semiconductors;2005
3. Molecular beam epitaxy;Surface Science;2002-03
4. Physical and Chemical Methods for Thin-Film Deposition and Epitaxial Growth;Specimen Handling, Preparation, and Treatments in Surface Characterization;2002
5. Role of hydrogen for adsorption and diffusion of a Si adatom on monohydride and dihydride Si(001) surfaces;Surface Science;2000-12
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