Molecular beam epitaxial growth of and heteroepitaxial layers (thermodynamic analysis and characterization)-Reference-Cited by-同舟云学术

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Molecular beam epitaxial growth of and heteroepitaxial layers (thermodynamic analysis and characterization)

Published:1995-11 Issue:3 Volume:156 Page:191-205
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Ivanov S.V.,Boudza A.A.,Kutt R.N.,Ledentsov N.N.,Meltser B.Ya.,Ruvimov S.S.,Shaposhnikov S.V.,Kop'ev P.S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference40 articles.

1. Liquid Phase Epitaxial Growth of InAs[sub 1−x] Sb[sub x]

2. Properties of MBE grown InSb and InSb1−xBix

3. Growth of InSb and InAs1 − x Sb x by OM‐CVD

4. Growth of InAs1−xSbx(0

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1. Growth of high quality InSb thin films on GaAs substrates by molecular beam epitaxy method with AlInSb/GaSb as compound buffer layers*;Chinese Physics B;2021-03-01

2. Heterogeneous integration of InAs/GaSb tunnel diode structure on silicon using 200 nm GaAsSb dislocation filtering buffer;AIP Advances;2018-10

3. Bandgap engineering of InSb by N incorporation by metal-organic chemical vapor deposition;Journal of Alloys and Compounds;2018-08

4. Contactless Measurement of Electron Concentration in Undoped Homoepitaxial InSb Layers;Journal of Communications Technology and Electronics;2018-03

5. Molecular Beam Epitaxy of Wide Gap II−VI Laser Heterostructures;Molecular Beam Epitaxy;2018

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