Elemental boron and antimony doping of MBE Si and SiGe structures grown at temperatures below 600°C-Reference-Cited by-同舟云学术

Elemental boron and antimony doping of MBE Si and SiGe structures grown at temperatures below 600°C

Published:1991-05 Issue:1-4 Volume:111 Page:907-911
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Powell A.R.,Kubiak R.A.A.,Newstead S.M.,Parry C.,Mattey N.L.,Smith D.W.,Brighten J.C.,Emeleus C.J.,Naylor T.,Basaran E.,Whall T.E.,Dowsett M.G.,Barlow R.D.,Parker E.H.C.,Bowen D.K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference12 articles.

1. Potential‐Enhanced Doping of Si Grown by Molecular Beam Epitaxy

2. Enhanced sticking coefficients and improved profile control using boron and antimony as coevaporated dopants in Si–MBE

3. C.P. Parry, S.N. Newstead, R.D. Barlow, P. Augustus, R.A.A. Kubiak, M.G. Dowsett, T.E. Whall and E.H.C. Parker, Appl. Phys. Letters, in press.

4. Annealing studies of highly doped boron superlattices

5. The delta-doped field-effect transistor (δFET)

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4. Solid boron and antimony doping of Si and SiGe grown by gas source molecular beam epitaxy;Journal of Electronic Materials;1993-04

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