On the MOVPE growth of self-aligned laser structures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference23 articles.
1. AlGaAs/GaAs melt‐etched inner stripe laser diode with self‐aligned structure
2. Single-Longitudinal-Mode Selfaligned (AlGa)As Double-Heterostructure Lasers Fabricated by Molecular Beam Epitaxy
3. Effects of GaAs/AlAs superlattice buffer layers on selective area regrowth for GaAs/AlGaAs self‐aligned structure lasers
4. Single‐longitudinal‐mode metalorganic chemical‐vapor‐deposition self‐aligned GaAlAs‐GaAs double‐heterostructure lasers
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1. Te surfactant effects on the morphology of patterned (001) GaAs homoepitaxy;Journal of Crystal Growth;2004-09
2. Metalorganic vapor deposition growth of AlGaAs on a ridged GaAs(100) substrate for a low threshold current laser;Journal of Crystal Growth;1996-10
3. Facet growth of AlxGa1-xAs with HCl gas by metalorganic vapor phase epitaxy;Journal of Crystal Growth;1994-12
4. Dopant migration and lateralp‐njunctions in metalorganic vapor phase epitaxy of AlGaAs on nonplanar GaAs substrates;Applied Physics Letters;1993-08-09
5. Deposition by LP-MOVPE in the Ga-In-As-P system on differently oriented substrates;Journal of Crystal Growth;1992-11
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