Growth of AlxGa1-xAs by MOVPE using alternative alkylaluminium precursors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Proc. 4th Intern. Conf. on MOVPE,1988
2. Properties of high‐purity AlxGa1−xAs grown by the metalorganic vapor‐phase‐epitaxy technique using methyl precursors
3. The influence of growth chemistry on the MOVPE growth of GaAs and AlxGa1−xAs layers and heterostructures
4. Reduced Carbon Contamination in OMVPE Grown GaAs and AlGaAs
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